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1. general description the NX3DV2567 is a four-pole double-throw analog switch (4pdt) optimized for switching wlan-sim supply, data and control signals. it has one digital select input (s) and four switches each with two independent input/outputs (ny0 and ny1) and a common input/output (nz). schmitt trigger action at s ma kes the circuit tolerant to slower input rise and fall times across the entire v cc range from 1.4 v to 4.3 v. a low input voltage threshold allows pin s to be driven by lower level logic signals without significant increase in supply current i cc . this makes it possible for the NX3DV2567 to switch 4.3 v signals with a 1.8 v digital controller, eliminating the need for logic level translation. the NX3DV2567 allows signals with amplitude up to v cc to be transmitted from nz to ny0 or ny1; or from ny0 or ny1 to nz.. 2. features and benefits ? wide supply voltage range from 1.4 v to 4.3 v ? very low on resistance for supply path: ? 0.5 (typical) at v cc =1.8v ? 0.45 (typical) at v cc =2.7v ? low on resistance for data path: ? 7 (typical) at v cc =1.8v ? 6 (typical) at v cc =2.7v ? low on capacitance for data path ? wide ? 3 db bandwidth > 160 mhz ? break-before-make switching ? high noise immunity ? esd protection: ? hbm jesd22-a114f class 3a exceeds 4000 v ? hbm jesd22-a114f class 3a i/o to gnd exceeds 7000 v ? cdm aec-q100-011 revision b exceeds 1000 v ? cmos low-power consumption ? latch-up performance exceeds 100 ma per jesd 78b class ii level a ? 1.8 v control logic at v cc = 3.6 v ? control input accepts volt ages above supply voltage ? very low supply current, even when input is below v cc ? high current handling capabilit y (350 ma continuous curr ent under 3.3 v supply for supply path switch) NX3DV2567 low-ohmic four-pole doub le-throw analog switch rev. 1 ? 28 september 2010 product data sheet
NX3DV2567 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 28 september 2010 2 of 20 nxp semiconductors NX3DV2567 low-ohmic four-pole double-throw analog switch ? specified from ? 40 c to +85 c and from ? 40 c to +125 c 3. applications ? cell phone, pda, digital camera, printer and notebook ? lcd monitor, tv and set-top box 4. ordering information 5. marking table 1. ordering information type number package temperature range name description version NX3DV2567hr ? 40 cto+125 c hxqfn16u plastic thermal enha nced extremely thin quad flat package; no leads; 16 terminals; utlp based; body 3 x 3 x 0.5 mm sot1039-1 NX3DV2567gu ? 40 c to +125 c xqfn16 plastic, extremely thin quad flat package; no leads; 16 terminals; body 1.80 x 2.60 x 0.50 mm sot1161-1 table 2. marking codes type number marking code NX3DV2567hr d60 NX3DV2567gu d60
NX3DV2567 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 28 september 2010 3 of 20 nxp semiconductors NX3DV2567 low-ohmic four-pole double-throw analog switch 6. functional diagram 7. pinning information 7.1 pinning fig 1. logic symbol fig 2. logic diagram (one switch) 001aam59 5 supply path switch 1z 1y0 1y1 data pat h switches 2z 2y0 2y1 3z 3y0 3y1 4z s 4y0 4y1 001aam59 6 s ny0 to other three switches ny1 nz fig 3. pin configuration sot1039-1 (hxqfn16u) fig 4. pin configuration sot1161-1 (xqfn16) 1 2 3 4 1y0 s 2y1 NX3DV2567 2z 12 11 10 9 4z 4y1 n.c. 3y0 16 15 14 13 1z 1y1 v cc 4y0 5 6 7 8 2y0 gnd 3y1 3z 001aam59 7 transparent top view terminal 1 index area NX3DV2567 terminal 1 index area 001aam59 8 transparent top view 8 3z 7 3y1 6 gnd 5 2y0 4y0 13 v cc 14 1y1 15 1z 16 4z 12 4y1 11 n.c. 10 3y0 9 1 1y0 2 s 3 2y1 4 2z
NX3DV2567 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 28 september 2010 4 of 20 nxp semiconductors NX3DV2567 low-ohmic four-pole double-throw analog switch 7.2 pin description 8. functional description [1] h = high voltage level; l = low voltage level. 9. limiting values table 3. pin description symbol pin description 1y0 1 independent input or output (supply switch) 2y0, 3y0, 4y0 5, 9, 13 independent input or output (data switch) s 2 select input 1y1 15 independent input or output (supply switch) 2y1, 3y1, 4y1 3, 7, 11 independent input or output (data switch) 1z 16 common output or input (supply switch) 2z, 3z, 4z 4, 8, 12 common output or input (data switch) gnd 6 ground (0 v) n.c. 10 not connected v cc 14 supply voltage table 4. function table [1] input s channel on lny0 hny1 table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). voltages are referenced to gnd (ground = 0 v). symbol parameter conditions min max unit v cc supply voltage ? 0.5 +4.6 v v i input voltage select input s [1] ? 0.5 +4.6 v v sw switch voltage [2] ? 0.5 v cc + 0.5 v i ik input clamping current v i < ? 0.5 v ? 50 - ma i sk switch clamping current v i < ? 0.5 v or v i >v cc + 0.5 v - 50 ma i sw switch current supp ly path switch v sw > ? 0.5 v or v sw < v cc + 0.5 v; source or sink current - 350 ma v sw > ? 0.5 v or v sw < v cc + 0.5 v; pulsed at 1 ms duration, < 10 % duty cycle; peak current - 500 ma data path switch v sw > ? 0.5 v or v sw < v cc + 0.5 v; source or sink current - 128 ma t stg storage temperature ? 65 +150 c
NX3DV2567 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 28 september 2010 5 of 20 nxp semiconductors NX3DV2567 low-ohmic four-pole double-throw analog switch [1] the minimum input voltage rating may be exceeded if the input current rating is observed. [2] the minimum and maximum switch voltage ratings may be exceeded if the switch clamping current rating is observed but may not exceed 4.6 v. [3] for hxqfn16u package: above 135 c the value of p tot derates linearly with 16.9 mw/k. [4] for xqfn16 package: above 133 c the value of p tot derates linearly with 14.5 mw/k. 10. recommended operating conditions [1] to avoid sinking gnd current from termi nal nz when switch current flows in terminal nyn, the voltage drop across the bidirec tional switch must not exceed 0.4 v. if the switch current flows into termi nal nz, no gnd current will flow from terminal nyn. in this c ase, there is no limit for the voltage drop across the switch. [2] applies to control signal levels. 11. static characteristics p tot total power dissipation t amb = ? 40 cto+125 c [3] [4] -250mw table 5. limiting values ?continued in accordance with the absolute maximum rating system (iec 60134). voltages are referenced to gnd (ground = 0 v). symbol parameter conditions min max unit table 6. recommended operating conditions symbol parameter conditions min max unit v cc supply voltage 1.4 4.3 v v i input voltage select input s 0 4.3 v v sw switch voltage [1] 0v cc v t amb ambient temperature ? 40 +125 c t/ v input transition rise and fall rate v cc = 1.4 v to 4.3 v [2] - 200 ns/v table 7. static characteristics at recommended operating conditions; volt ages are referenced to gnd (ground 0 v). symbol parameter conditions t amb = 25 c t amb = ? 40 c to +125 c unit min typ max min max (85 c) max (125 c) v ih high-level input voltage v cc = 1.4 v to 1.6 v 0.9 - - 0.9 - - v v cc = 1.65 v to 1.95 v 0.9 - - 0.9 - - v v cc = 2.3 v to 2.7 v 1.1 - - 1.1 - - v v cc = 2.7 v to 3.6 v 1.3 - - 1.3 - - v v cc = 3.6 v to 4.3 v 1.4 - - 1.4 - - v v il low-level input voltage v cc = 1.4 v to 1.6 v - - 0.3 - 0.3 0.3 v v cc = 1.65 v to 1.95 v - - 0.4 - 0.4 0.3 v v cc = 2.3 v to 2.7 v - - 0.4 - 0.4 0.4 v v cc = 2.7 v to 3.6 v - - 0.5 - 0.5 0.5 v v cc = 3.6 v to 4.3 v - - 0.6 - 0.6 0.6 v i i input leakage current select input s; v i =gndto4.3v; v cc = 1.4 v to 4.3 v --- - 0.5 1 a
NX3DV2567 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 28 september 2010 6 of 20 nxp semiconductors NX3DV2567 low-ohmic four-pole double-throw analog switch 11.1 test circuits i s(off) off-state leakage current ny0 and ny1 port; see figure 5 v cc = 1.4 v to 3.6 v - - 5- 50 500 na v cc = 3.6 v to 4.3 v - - 10 - 50 500 na i s(on) on-state leakage current nz port; v cc = 1.4 v to 3.6 v; see figure 6 v cc = 1.4 v to 3.6 v - - 5- 50 500 na v cc = 3.6 v to 4.3 v - - 10 - 50 500 na i cc supply current v i =v cc or gnd; v sw =gndorv cc v cc = 3.6 v - - 100 - 500 5000 na v cc = 4.3 v - - 150 - 800 6000 na i cc additional supply current v sw =gndorv cc v i = 2.6 v; v cc =4.3v - 2.0 4.0 - 7 7 a v i = 2.6 v; v cc = 3.6 v - 0.35 0.7 - 1 1 a v i = 1.8 v; v cc = 4.3 v - 7.0 10.0 - 15 15 a v i = 1.8 v; v cc =3.6v - 2.5 4.0 - 5 5 a v i = 1.8 v; v cc = 2.5 v - 50 200 - 300 500 na c i input capacitance -1----pf c s(off) off-state capacitance supply path switch - 35 - - - - pf data path switch - 3 - - - - pf c s(on) on-state capacitance supply path switch - 130 - - - - pf data path switch - 16 - - - - pf table 7. static characteristics ?continued at recommended operating conditions; volt ages are referenced to gnd (ground 0 v). symbol parameter conditions t amb = 25 c t amb = ? 40 c to +125 c unit min typ max min max (85 c) max (125 c) v i =0.3vorv cc ? 0.3 v; v o =v cc ? 0.3 v or 0.3 v. fig 5. test circuit for measuring off-state leakage current i s 001aam59 9 v i v o s nz gnd ny0 v il or v ih ny1 switch 1 2 s switch v ih 1 v il 2 v cc
NX3DV2567 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 28 september 2010 7 of 20 nxp semiconductors NX3DV2567 low-ohmic four-pole double-throw analog switch 11.2 on resistance [1] typical values are measured at t amb = 25 c. [2] measured at identical v cc , temperature and input voltage. v i =0.3vorv cc ? 0.3 v; v o =v cc ? 0.3 v or 0.3 v. fig 6. test circuit for measuring on-state leakage current i s 001aam60 0 v i v o s nz gnd ny0 v il or v ih ny1 switch 1 2 v cc s switch v ih 1 v il 2 table 8. on resistance at recommended operating conditions; voltages are referenced to gnd (ground = 0 v); for graphs see figure 8 to figure 13 . symbol parameter conditions t amb = ? 40 c to +85 c t amb = ? 40 c to +125 c unit min typ [1] max min max supply path switch r on on resistance v i =gndtov cc ; i sw = 100 ma; see figure 7 v cc =1.8v; v sw = 0 v, 1.8 v - 0.5 0.75 - 0.85 v cc =2.7v; v sw = 0 v, 2.3 v - 0.45 0.7 - 0.8 r on on resistance mismatch between channels v i =gndtov cc ; i sw = 100 ma [2] v cc =2.7v; v sw =0v - 0.1 - - - data path switches r on on resistance v i =gndtov cc ; i sw =20ma; see figure 7 v cc =1.8v; v sw = 0 v, 1.8 v - 7.0 10.0 - 11.0 v cc =2.7v; v sw = 0 v, 2.3 v - 6.0 9.5 - 10.5 r on on resistance mismatch between channels v i =gndtov cc ; i sw =20ma [2] v cc =2.7v; v sw =0v - 0.2 - - -
NX3DV2567 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 28 september 2010 8 of 20 nxp semiconductors NX3DV2567 low-ohmic four-pole double-throw analog switch 11.3 on resistance t est circuit and graphs r on =v sw / i sw .(1)v cc =1.8v. (2) v cc =2.7v. fig 7. test circuit for measuring on resistance fig 8. typical on resistance as a function of input voltage (supply path switch) v 001aam60 1 s nz gnd ny0 v il or v ih ny1 switch 1 2 s switch v il 1 v ih 2 v sw v i i sw v cc 001aam602 v i (v) 03 2 1 0.4 0.2 0.6 0.8 r on ( ) 0 (1) (2) (1) t amb = 125 c. (2) t amb =85 c. (3) t amb =25 c. (4) t amb = ? 40 c. (1) t amb = 125 c. (2) t amb =85 c. (3) t amb =25 c. (4) t amb = ? 40 c. fig 9. on resistance as a function of input voltage; v cc = 1.8 v (supply path switch) fig 10. on resistance as a function of input voltage; v cc = 2.7 v (supply path switch) 001aag566 v i (v) 03 2 1 0.4 0.6 0.2 0.8 1.0 r on ( ) 0 (1) (2) (3) (4) 001aag568 v i (v) 03 2 1 0.4 0.6 0.2 0.8 1.0 r on ( ) 0 (1) (2) (3) (4)
NX3DV2567 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 28 september 2010 9 of 20 nxp semiconductors NX3DV2567 low-ohmic four-pole double-throw analog switch (1) v cc =1.8v. (2) v cc =2.7v. fig 11. typical on resistance as a function of input voltage (data path switch) 001aam603 v i (v) 03 2 1 9 11 7 13 15 r on ( ) 5 (1) (2) (1) t amb = 125 c. (2) t amb =85 c. (3) t amb =25 c. (4) t amb = ? 40 c. (1) t amb = 125 c. (2) t amb =85 c. (3) t amb =25 c. (4) t amb = ? 40 c. fig 12. on resistance as a function of input voltage; v cc = 1.8 v (data path switch) fig 13. on resistance as a function of input voltage; v cc = 2.7 v (data path switch) v i (v) 0 2.0 1.6 0.8 1.2 0.4 001aam604 9 11 7 13 15 r on ( ) 5 (1) (2) (3) (4) v i (v) 03 2 1 001aam605 6 8 10 r on ( ) 4 (1) (2) (3) (4)
NX3DV2567 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 28 september 2010 10 of 20 nxp semiconductors NX3DV2567 low-ohmic four-pole double-throw analog switch 12. dynamic characteristics table 9. dynamic characteristics at recommended operating conditions; voltages are re ferenced to gnd (ground = 0 v); for load circuit see figure 16 . symbol parameter conditions 25 c ? 40 c to +125 c unit min typ [1] max min max (85 c) max (125 c) supply path switch t en enable time s to 1z or 1y0, 1y1; see figure 14 v cc = 1.4 v to 1.6 v - 41 90 - 120 120 ns v cc = 1.65 v to 1.95 v - 30 70 - 80 90 ns v cc = 2.3 v to 2.7 v - 20 45 - 50 55 ns v cc = 2.7 v to 3.6 v - 19 40 - 45 50 ns v cc = 3.6 v to 4.3 v - 19 40 - 45 50 ns t dis disable time s to 1z or 1y0, 1y1; see figure 14 v cc = 1.4 v to 1.6 v - 24 70 - 80 90 ns v cc = 1.65 v to 1.95 v - 15 55 - 60 65 ns v cc = 2.3 v to 2.7 v - 9 25 - 30 35 ns v cc = 2.7 v to 3.6 v - 8 20 - 25 30 ns v cc = 3.6 v to 4.3 v - 8 20 - 25 30 ns t b-m break-before-make time see figure 15 [2] v cc = 1.4 v to 1.6 v - 20 - 9 - - ns v cc = 1.65 v to 1.95 v - 17 - 7 - - ns v cc = 2.3 v to 2.7 v - 13 - 4 - - ns v cc = 2.7 v to 3.6 v - 11 - 3 - - ns v cc = 3.6 v to 4.3 v - 11 - 2 - - ns data path switch t en enable time s to nz or nyn; see figure 14 v cc = 1.4 v to 1.6 v - 40 90 - 120 120 ns v cc = 1.65 v to 1.95 v - 29 70 - 80 90 ns v cc = 2.3 v to 2.7 v - 20 45 - 50 55 ns v cc = 2.7 v to 3.6 v - 19 40 - 45 50 ns v cc = 3.6 v to 4.3 v - 19 40 - 45 50 ns t dis disable time s to nz or nyn; see figure 14 v cc = 1.4 v to 1.6 v - 21 70 - 80 90 ns v cc = 1.65 v to 1.95 v - 13 55 - 60 65 ns v cc = 2.3 v to 2.7 v - 8 25 - 30 35 ns v cc = 2.7 v to 3.6 v - 7 20 - 25 30 ns v cc = 3.6 v to 4.3 v - 7 20 - 25 30 ns
NX3DV2567 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 28 september 2010 11 of 20 nxp semiconductors NX3DV2567 low-ohmic four-pole double-throw analog switch [1] typical values are measured at t amb = 25 c and v cc = 1.5 v, 1.8 v, 2.5 v, 3.3 v and 4.3 v respectively. [2] break-before-make guaranteed by design. 12.1 waveform and test circuits t b-m break-before-make time see figure 15 [2] v cc = 1.4 v to 1.6 v - 23 - 9 - - ns v cc = 1.65 v to 1.95 v - 19 - 7 - - ns v cc = 2.3 v to 2.7 v - 15 - 4 - - ns v cc = 2.7 v to 3.6 v - 13 - 3 - - ns v cc = 3.6 v to 4.3 v - 12 - 2 - - ns table 9. dynamic characteristics ?continued at recommended operating conditions; voltages are re ferenced to gnd (ground = 0 v); for load circuit see figure 16 . symbol parameter conditions 25 c ? 40 c to +125 c unit min typ [1] max min max (85 c) max (125 c) measurement points are given in table 10 . logic level: v oh is typical output voltage level that occurs with the output load. fig 14. enable and disable times 001aam60 6 v i v m t en t en t dis t dis v x v x v x v x gnd gnd v oh v oh gnd s input nz output off to high high to off nz output high to off off to high ny1 connected to v ext ny0 connected to v ext table 10. measurement points supply voltage input output v cc v m v x 1.4 v to 4.3 v 0.5v cc 0.9v oh
NX3DV2567 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 28 september 2010 12 of 20 nxp semiconductors NX3DV2567 low-ohmic four-pole double-throw analog switch a. test circuit b. input and output measurement points fig 15. test circuit for measuri ng break-before-make timing 001aam60 7 s nz gnd ny0 ny1 v v o c l r l v i v ext = 1.5 v v cc g 001aag57 2 v i t b-m v o 0.9v o 0.9v o 0.5v i test data is given in table 11 . definitions test circuit: r l = load resistance. c l = load capacitance including jig and probe capacitance. v ext = external voltage for measuring switching times. fig 16. test circuit for measuring switching times 001aam60 8 s nz gnd ny0 ny1 v v o c l r l v i v ext = 1.5 v v cc g switch 1 2 table 11. test data supply voltage input load v cc v i t r , t f c l r l 1.4 v to 4.3 v v cc 2.5ns 35pf 50
NX3DV2567 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 28 september 2010 13 of 20 nxp semiconductors NX3DV2567 low-ohmic four-pole double-throw analog switch 12.2 additional dynami c characteristics [1] f i is biased at 0.5v cc . 12.3 test circuits table 12. additional dynamic characteristics at recommended operating conditions; voltag es are referenced to gnd (ground = 0 v); v i = gnd or v cc (unless otherwise specified); t r = t f 2.5 ns; t amb = 25 c. symbol parameter conditions min typ max unit data path switch f ( ? 3db) ? 3 db frequency response r l =50 ; see figure 17 [1] v cc = 2.7 v to 3.6 v - 330 - mhz iso isolation (off-state) f i =10mhz; r l =50 ; see figure 18 [1] v cc = 2.7 v to 3.6 v - ? 60 - db xtalk crosstalk between switches; f i =10mhz;r l =50 ;see figure 19 [1] v cc = 2.7 v to 3.6 v - ? 60 - db q inj charge injection f i = 1 mhz; c l = 0.1 nf; r l =1 m ; v gen =0v; r gen =0 ; see figure 20 v cc = 2.7 v to 3.6 v - 10 - pc adjust f i voltage to obtain 0 dbm level at output. increase f i frequency until db meter reads ? 3db. fig 17. test circuit for measuring the frequency response when channel is in on-state db 001aam60 9 s nz gnd ny0 v il or v ih ny1 switch 1 2 s switch v il 1 v ih 2 f i r l v cc 0.5v cc adjust f i voltage to obtain 0 dbm level at input. fig 18. test circuit for measuring isolation (off-state) db 001aam61 0 s nz gnd ny0 v il or v ih ny1 switch 1 2 s switch v ih 1 v il 2 f i r l v cc 0.5v cc r l 0.5v cc
NX3DV2567 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 28 september 2010 14 of 20 nxp semiconductors NX3DV2567 low-ohmic four-pole double-throw analog switch 20 log 10 (v o2 / v o1 ) or 20 log 10 (v o1 / v o2 ). fig 19. test circuit for measuri ng crosstalk between switches v 001aam61 1 r l f i v o2 0.5v cc v r l r i 50 50 v o1 0.5v cc channel on nz or ny0 nz or ny0 ny0 or nz ny0 or nz s v il channel off a. test circuit b. input and output pulse definitions definition: q inj = v o c l . v o = output voltage variation. r gen = generator resistance. v gen = generator voltage. fig 20. test circuit for measuring charge injection 001aam61 2 s nz gnd ny0 ny1 v v o c l r l r gen v i v gen v cc g switch 1 2 001aam61 3 v o off on off logic input v o (s)
NX3DV2567 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 28 september 2010 15 of 20 nxp semiconductors NX3DV2567 low-ohmic four-pole double-throw analog switch 13. package outline fig 21. package outline sot1039-1 (hxqfn16u) references outline version european projection issue date iec jedec jeita sot1039-1 - - - - - - sot1039- 1 07-11-14 07-12-01 unit a max mm 0.5 0.05 0.00 0.35 0.25 1.95 1.75 3.1 2.9 1.95 1.75 0.5 1.5 0.35 0.25 0.1 a 1 dimensions (mm are the original dimensions) h xqfn16u: plastic thermal enhanced extremely thin quad flat package; no leads; 1 6 terminals; utlp based; body 3 x 3 x 0.5 mm 0 2.5 5 mm scale b d 3.1 2.9 d h e e h e e 1 1.5 e 2 l l 1 0.1 0.0 v w 0.05 y 0.05 y 1 0.1 c y c y 1 x b e 2 e 1 e e 1/2 e 1/2 e a c b v m c w m terminal 1 index area d h e h l 1 l 9 8 13 16 12 4 1 5 b a terminal 1 index area d e detail x a 1 a
NX3DV2567 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 28 september 2010 16 of 20 nxp semiconductors NX3DV2567 low-ohmic four-pole double-throw analog switch fig 22. package outline sot1161-1 (xqfn16) references outline version european projection issue date iec jedec jeita sot1161-1 - - - - - - - - - sot1161-1_po 09-12-28 09-12-29 unit (1) mm max nom min 0.5 0.05 0.00 0.25 0.20 0.15 1.9 1.8 1.7 2.7 2.6 2.5 0.4 1.2 0.45 0.40 0.35 0.1 a dimensions note 1. plastic or metal protrusions of 0.075 mm maximum per side are not included. x qfn16: plastic, extremely thin quad flat package; no leads; 1 6 terminals; body 1.80 x 2.60 x 0.50 mm sot1161- 1 a 1 a 3 0.127 bdeee 1 1.2 e 2 ll 1 0.55 0.50 0.45 vw 0.05 y 0.05 y 1 0.05 0 1 2 mm scale b a terminal 1 index area d e x c y c y 1 detail x a a 1 a 3 terminal 1 index area b e 2 e 1 a c b v c w l l 1 5 8 16 13 9 12 4 1 e e
NX3DV2567 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 28 september 2010 17 of 20 nxp semiconductors NX3DV2567 low-ohmic four-pole double-throw analog switch 14. abbreviations 15. revision history table 13. abbreviations acronym description cdm charged device model cmos complementary metal-oxide semiconductor esd electrostatic discharge hbm human body model mm machine model pda personal digital assistant ttl transistor-transistor logic table 14. revision history document id release date data sheet status change notice supersedes NX3DV2567 v.1 20100928 product data sheet - -
NX3DV2567 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 28 september 2010 18 of 20 nxp semiconductors NX3DV2567 low-ohmic four-pole double-throw analog switch 16. legal information 16.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 16.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 16.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interrupt ion, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use in automotive applications ? this nxp semiconductors product has been qua lified for use in automotive applications. the product is not desi gned, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be ex pected to result in personal injury, death or severe property or environmental dam age. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this docu ment contains the product specification.
NX3DV2567 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 28 september 2010 19 of 20 nxp semiconductors NX3DV2567 low-ohmic four-pole double-throw analog switch export control ? this document as well as the item(s) described herein may be subject to export control regu lations. export might require a prior authorization from national authorities. 16.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 17. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors NX3DV2567 low-ohmic four-pole double-throw analog switch ? nxp b.v. 2010. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 28 september 2010 document identifier: NX3DV2567 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 18. contents 1 general description . . . . . . . . . . . . . . . . . . . . . . 1 2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 4 ordering information . . . . . . . . . . . . . . . . . . . . . 2 5 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 functional diagram . . . . . . . . . . . . . . . . . . . . . . 3 7 pinning information . . . . . . . . . . . . . . . . . . . . . . 3 7.1 pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7.2 pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4 8 functional description . . . . . . . . . . . . . . . . . . . 4 9 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 10 recommended operating conditions. . . . . . . . 5 11 static characteristics. . . . . . . . . . . . . . . . . . . . . 5 11.1 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 11.2 on resistance . . . . . . . . . . . . . . . . . . . . . . . . . . 7 11.3 on resistance test circuit and graphs. . . . . . . . 8 12 dynamic characteristics . . . . . . . . . . . . . . . . . 10 12.1 waveform and test circuits . . . . . . . . . . . . . . . 11 12.2 additional dynamic characteristics . . . . . . . . . 13 12.3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 13 package outline . . . . . . . . . . . . . . . . . . . . . . . . 15 14 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 17 15 revision history . . . . . . . . . . . . . . . . . . . . . . . . 17 16 legal information. . . . . . . . . . . . . . . . . . . . . . . 18 16.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 18 16.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 16.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 16.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 19 17 contact information. . . . . . . . . . . . . . . . . . . . . 19 18 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

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